Stacked FET with local contact
AssigneeInternational Business Machines Corporation
InventorsRuilong Xie, James P. Mazza, Shahrukh Khan, Iqbal Rashid Saraf, Biswanath Senapati, Tenko Yamashita
Life of this patent
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Abstract
A semiconductor device includes a first source/drain region, a first contact over the first source/drain region, a second source/drain region, and a lateral contact connecting the second source/drain region to a back end of line (BEOL). Portions of the first contact are recessed, and the lateral contact overlaps with the recessed portions of the first contact. The first source/drain region is formed over the second source/drain region.
Claims18
A semiconductor device, comprising:
- a first source/drain region;
- a first contact over the first source/drain region, wherein portions of the first contact are recessed;
- a second source/drain region;
- a lateral contact connecting the second source/drain region to a back end of line (BEOL),
- wherein the lateral contact overlaps with the recessed portions of the first contact, and
- wherein the first source/drain region is formed over the second source/drain region;
- and
- a second contact comprising:
- a first portion over the second source/drain region;
- and
- a second portion connecting the first portion to the lateral contact.
A method for forming a semiconductor device, the method comprising:
- forming a first source/drain region;
- forming a first contact over the first source/drain region, wherein portions of the first contact are recessed;
- forming a second source/drain region;
- forming a lateral contact connecting the second source/drain region to a back end of line (BEOL),
- wherein the lateral contact overlaps with the recessed portions of the first contact, and wherein the first source/drain region is formed over the second source/drain region;
- and
- forming a second contact, wherein the forming the second contact comprises:
- forming a first portion over the second source/drain region;
- and
- forming a second portion connecting the first portion to the lateral contact.
A semiconductor device, comprising:
- a source/drain contact connecting a source/drain region to a back end of line (BEOL);
- a gate contact connecting a gate region to the BEOL;
- and
- a lateral contact, wherein the gate contact is isolated from direct contact with the lateral contact through a dielectric isolation layer formed over the gate contact.
Dependencies are inferred from the claim text.