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US 12,733,219 B2Granted
Semiconductor device including backside isolation structure and placeholder isolation structure
AssigneeSamsung Electronics Co., Ltd.
InventorsJaehong Lee, Seung Min Song, Kang-ill Seo
Life of this patent
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Abstract
Provided is a semiconductor device including: a 1st source/drain region and a 1st backside contact structure, vertically below the 1st source/drain region, connected to the 1st source/drain region; a 2nd source/drain region and a 1st placeholder isolation structure vertically below the 2nd source/drain region; and a backside isolation structure, on a back side of the semiconductor device, surrounding the 1st backside contact structure and the 1st placeholder isolation structure.
Claims20
A semiconductor device comprising:
- a 1st source/drain region and a 1st backside contact structure, vertically below the 1st source/drain region, connected to the 1st source/drain region;
- a 2nd source/drain region and a 1st placeholder isolation structure vertically below the 2nd source/drain region;
- a backside isolation structure, on a back side of the semiconductor device, surrounding the 1st backside contact structure and the 1st placeholder isolation structure;
- and
- a 3rd source/drain region and a 2nd placeholder isolation structure vertically below the 3rd source/drain region,
- wherein the 2nd source/drain region is between the 1st source/drain region and the 3rd source/drain region, and
- wherein a horizontal distance between the 1st backside contact structure and the 1st placeholder isolation structure is equal to a horizontal distance between the 1st placeholder isolation structure and the 2nd placeholder isolation structure.
4 more elements
A semiconductor device comprising:
- a 1st device comprising at least one 1st transistor forming a logic device or a memory device;
- a 2nd device comprising at least one 2nd transistor forming another logic device or another memory device;
- and
- a backside isolation structure at a back side of each of the 1st and 2nd devices,
- wherein the 1st device is adjacent to the 2nd device in a 1st horizontal direction,
- wherein no shallow trench isolation (STI) structure is formed in the backside isolation structure adjacent the 1st device in the 1st horizontal direction, and
- wherein no STI structure is formed in the backside isolation structure adjacent the 1st device in a 2nd horizontal direction perpendicular to the 1st horizontal direction.
4 more elements
A semiconductor device comprising:
- a 1st device comprising at least one transistor;
- a 2nd device comprising at least one passive device;
- a backside isolation structure at a back side of the 1st and 2nd devices;
- and
- a backside contact structure extending in the backside isolation structure and electrically connected to a source/drain region of the transistor,
- wherein the 1st device is horizontally adjacent to the 2nd device,
- wherein no shallow trench isolation (STI) structure is formed between the backside contact structure and the 2nd device in the backside isolation structure, and
- wherein no STI structure is formed in contact with the backside contact structure in the backside isolation structure.
5 more elements
Dependencies are inferred from the claim text.