Semiconductor device and method for forming the same
AssigneeMacronix International Co., Ltd.
InventorsDai-Ying Lee, Cheng-Hsien Lu
Life of this patent
Estimating the term…
Abstract
Semiconductor devices and a method for forming a semiconductor device are provided. The semiconductor device includes a substrate, a first semiconductor structure on the substrate, a second semiconductor structure on the first semiconductor structure, and a wire coupled between the substrate and the first semiconductor structure. The first semiconductor structure and the second semiconductor structure are electrically connected to the substrate through the wire. A footprint of the first semiconductor structure is greater than a footprint of the second semiconductor structure.
Claims9
A semiconductor device, comprising:
- a substrate;
- a first semiconductor structure on the substrate;
- a second semiconductor structure on the first semiconductor structure;
- and
- a wire coupled between the substrate and the first semiconductor structure, wherein the first semiconductor structure and the second semiconductor structure are electrically connected to the substrate through the wire,
- wherein a footprint of the first semiconductor structure is greater than a footprint of the second semiconductor structure, the first semiconductor structure comprises an oxide film and a conductive portion in the oxide film, the oxide film and the conductive portion is bonded to the second semiconductor structure, the oxide film and the conductive portion comprise the same type of metal.
A semiconductor device, comprising:
- a first semiconductor structure having a first active surface;
- and
- a second semiconductor structure having a second active surface, wherein the second active surface of the second semiconductor structure faces toward the first active surface of the first semiconductor structure, and the first semiconductor structure is bonded to the second semiconductor structure;
- wherein the first active surface of the first semiconductor structure comprises Ti, the first semiconductor structure comprises an oxide film and a conductive portion in the oxide film, the oxide film and the conductive portion is bonded to the second semiconductor structure, the oxide film and the conductive portion comprise the same type of metal.
Dependencies are inferred from the claim text.