Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsIl Do Kim, Lynn Lee, Seung Bum Kim
Life of this patent
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AssigneeSK hynix Inc.
InventorsIl Do Kim, Lynn Lee, Seung Bum Kim
Estimating the term…
A semiconductor device includes: a vertical conductive line; a horizontal layer oriented horizontally from the vertical conductive line; a horizontal conductive line crossing the horizontal layer; and a data storage element in contact with the horizontal layer, wherein the data storage element includes: a first electrode including a first cylinder that is in contact with an edge of an upper portion of the horizontal layer and a second cylinder that is in contact with an edge of a lower portion of the horizontal layer; a second electrode disposed over the first electrode; and a dielectric layer between the first electrode and the second electrode, and the second electrode includes: a sharing portion disposed in a gap between the first cylinder and the second cylinder; inner portions disposed on an inner surface of the first cylinder and an inner surface of the second cylinder; and outer portions disposed over the first cylinder and below the second cylinder.
A semiconductor device, comprising:
Dependencies are inferred from the claim text.