Semiconductor device, power conversion device, and method of manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsYosuke Nakata, Yuji Sato, Kentaro Yoshida, Kei Hayashi
Life of this patent
Estimating the term…
Loading patent…
AssigneeMitsubishi Electric Corporation
InventorsYosuke Nakata, Yuji Sato, Kentaro Yoshida, Kei Hayashi
Estimating the term…
Provided is a technique capable of reducing wiring inductance of a smoothing capacitor. A circuit pattern electrically connected to a semiconductor element is provided on an insulating substrate on a cooler. A smoothing capacitor is disposed not to be overlapped with the semiconductor element in a plan view to include an inner electrode forming capacitance, a capacitor case housing the inner electrode, and a terminal protruding from the capacitor case seamlessly. A first sealing portion covers at least a part of each of the terminal of the smoothing capacitor, the insulating substrate, and the circuit pattern. The terminal of the smoothing capacitor and the circuit pattern are directly connected to each other by bonding force of an interface between the terminal and the circuit pattern.
A semiconductor device, comprising:
Dependencies are inferred from the claim text.