Image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorEunsub Shim
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Abstract
An image sensor including: a plurality of first photoelectric conversion elements included in a first region of a pixel; a plurality of second photoelectric conversion elements included in a second region of the pixel; a first overflow capacitor connected to the plurality of first photoelectric conversion elements to store overflow charges of the first photoelectric conversion elements; a second overflow capacitor connected to the plurality of second photoelectric conversion elements to store overflow charges of the second photoelectric conversion elements; and one or more microlenses disposed on the pixel.
Claims20
An image sensor comprising:
- a plurality of first photoelectric conversion elements included in a first region of a unit pixel;
- a plurality of second photoelectric conversion elements included in a second region of the unit pixel;
- a first overflow capacitor connected to the plurality of first photoelectric conversion elements to store overflow charges of the first photoelectric conversion elements;
- a second overflow capacitor connected to the plurality of second photoelectric conversion elements to store overflow charges of the second photoelectric conversion elements;
- and
- two or more microlenses disposed on the unit pixel,
- wherein the first region and the second region respectively correspond to a first side of two or more microlenses and a second side of two or more microlenses.
An image sensor comprising a pixel array in which a plurality of pixels are arranged,
- wherein the pixel array comprises:
- unit pixels each including a plurality of sub-pixels;
- and
- one or more auto focusing (AF) pixels including a first sub-pixel group and a second sub-pixel group of the plurality of sub-pixels,
- wherein one microlens is disposed above each of the one or more AF pixels,
- wherein first photodiodes corresponding to the first sub-pixel group included in the one or more AF pixels are electrically connected to a transfer circuit included in the one or more AF pixels,
- wherein the transfer circuit comprises an overflow capacitor for storing overflow charges of the photodiodes corresponding to the first sub-pixel group, and
- wherein a first region and a second region respectively correspond to a first side of the microlens and a second side of the microlens.
An image sensor comprising a pixel array including one or more auto focusing (AF) pixels,
- wherein a microlens is disposed on the AF pixel,
- wherein the AF pixel comprises:
- a plurality of photodiodes corresponding to a plurality of sub-pixels included in the AF pixel;
- a plurality of transfer transistors configured to transfer photocharges of the plurality of photodiodes to a transfer circuit;
- and
- the transfer circuit including a plurality of overflow capacitors for storing overflow charges of the plurality of photodiodes,
- wherein first overflow charges of a photodiode included in a region corresponding to a first region of the microlens are stored in a first overflow capacitor of the plurality of overflow capacitors,
- wherein second overflow charges of a photodiode included in a region corresponding to a second region of the microlens stored in a second overflow capacitor of the plurality of overflow capacitors, and
- wherein the first overflow charges and the second overflow charges are processed independently of each other.
Dependencies are inferred from the claim text.