Solid-state imaging device and electronic device

A solid-state imaging device comprising:

• a pixel array section including a plurality of pixels arrayed in a matrix, the pixels including a plurality of first pixels that respectively perform photoelectric conversion of light of a first wavelength component, wherein
• each of the pixels includes:
• a photoelectric conversion section that performs photoelectric conversion of incident light;
• a transfer transistor that controls transfer of a charge generated in the photoelectric conversion section;
• a floating diffusion region that accumulates the charge transferred from the photoelectric conversion section via the transfer transistor;
• and
• an amplification transistor that causes a voltage signal corresponding to the charge accumulated in the floating diffusion region to emerge in a signal line,
• the plurality of first pixels is arrayed in a first diagonal direction in the pixel array section, and
• at least two first pixels of the plurality of first pixels arrayed in the first diagonal direction share one region defined as the floating diffusion region, wherein the floating diffusion region is disposed directly between the two first pixels sharing the floating diffusion region along the first diagonal direction.