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US 12,731,962 B2Granted
Narrow linewidth semiconductor laser
AssigneeIoptis Corp.
InventorGeorgios Margaritis
Life of this patent
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AssigneeIoptis Corp.
InventorGeorgios Margaritis
Estimating the term…
A novel narrow linewidth laser device is disclosed that is formed monolithically on a semiconductor substrate, such as an indium phosphide substrate, that includes a continuous waveguide with a gain section and a grating section wherein a grating is constructed so that its power reflectivity profile has a ratio of reflectivity slope over reflectivity at the 3 dB point below the reflectivity peak on the red side (longer wavelength side) of the grating larger than a value of 2/nm. The operating wavelength of the device may be tuned thermally, electrically, or thermo-electrically to be on the red side of the fiber Bragg grating reflectivity profile, preferably at the 3 dB point below the reflectivity peak or lower. In another embodiment, a second grating is formed on a second grating section of the waveguide on the opposite side of the gain section than the first grating section and wherein the reflectivity profile of the second grating overlaps at least a portion of the reflectivity profile of the first grating.
A semiconductor laser device comprising a continuous waveguide formed on a semiconductor substrate, wherein said waveguide includes a gain section configured to produce light in response to a bias current and a grating section that includes a grating, wherein a ratio of an absolute value of a power reflectivity slope at a minus three dB point on a red side of said grating to a maximum value of a power reflectivity of said grating is greater than 2/nm, whereby the device is configured to produce single mode laser light with a Lorentzian linewidth smaller than 50 KHz.
Dependencies are inferred from the claim text.