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US 12,731,813 B2Granted
Solid-state electrolyte material comprising a chalcogenide-based ionic-conductive structure, particularly a sulfide-based ionic-conductive structure
AssigneeAmpcera Inc.
InventorsHui Du, James Emery Brown, Sumin Zhu, Chen Chen
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Abstract
A solid-state electrolyte material, comprising: a chalcogenide-based ionic-conductive structure comprising: one or more of lithium, sodium, aluminum, magnesium, iron, and potassium; one or more of sulfur, oxygen, selenium, and tellurium; one or more of boron, gallium, antimony, silicon, germanium, tin, phosphorus, and arsenic; and at least one of excess chalcogen and excess chalcogenide incorporated into the chalcogenide-based ionic-conductive structure.
Claims16
A solid-state electrolyte material, comprising:
- a sulfide-based ionic-conductive argyrodite structure comprising:
- lithium;
- sulfur and optionally in combination with oxygen, selenium, tellurium, or a combination thereof;
- phosphorus and optionally in combination with boron, gallium, antimony, silicon, germanium, tin, phosphorus, er arsenic, or a combination thereof;
- one or more halogens;
- and
- excess sulfur incorporated into the sulfide-based ionic-conductive argyrodite structure,
- wherein the excess sulfur is in the form of superlattice stacking faults within the sulfide-based ionic-conductive argyrodite structure between lithium-sulfur planes and phosphorous-sulfur-lithium-halogen planes of the argyrodite crystal structure.
5 more elements
A method of manufacturing a solid-state electrolyte material, the method comprising:
- providing an argyrodite precursor formulation comprising:
- lithium;
- sulfur and optionally in combination with oxygen, selenium, tellurium, or a combination thereof;
- phosphorus and optionally in combination with one or more of boron, gallium, antimony, silicon, germanium, tin, or arsenic, or a combination thereof;
- one or more halogens;
- and excess sulfur;
- and
- annealing the argyrodite precursor formulation via solid-state reaction in a closed system to form a sulfide-based ionic-conductive argyrodite structure comprising:
- the lithium;
- the sulfur and optionally in combination with oxygen, selenium, tellurium, or a combination thereof;
- the phosphorus and optionally in combination with one or more of boron, gallium, antimony, silicon, germanium, tin, or arsenic, or a combination thereof;
- and the one or more halogens,
- wherein the excess sulfur is incorporated into the sulfide-based ionic-conductive argyrodite structure in the form of superlattice stacking faults within the sulfide-based ionic-conductive argyrodite structure between lithium-sulfur planes and phosphorous-sulfur-lithium-halogen planes of the argyrodite crystal structure.
10 more elements
Dependencies are inferred from the claim text.