Plasma processing apparatus

A plasma processing apparatus, comprising:

• a processing chamber that is disposed inside a vacuum container and inside which a wafer to be processed is placed and plasma is generated;
• and
• a cylindrical sample stage disposed within the processing chamber and having an upper surface on which the wafer is placed, wherein
• the sample stage includes:
• a disc-like substrate;
• a dielectric film covering an upper surface of the substrate;
• and a heater layer disposed inside the dielectric film,
• the heater layer includes a plurality of film heaters respectively disposed in a plurality of rectangular regions,
• the plurality of regions are each disposed with one sides of the rectangular shapes facing to adjacent regions,
• a cylindrical power supply connector that is attached to and detached from a bottom of the substrate is provided,
• the power supply connector is configured to be electrically connected to one location of each of the plurality of film heaters respectively disposed in the plurality of regions to supply power from a DC power source,
• a wiring component is provided that includes inside thereof a plurality of lines to which the power is supplied and is made of a resin-made plate-like component connected to a bottom of the power supply connector, and
• the wiring component has an arm part extending along a bottom surface of the substrate.