Plasma processing apparatus
AssigneeTokyo Electron Limited
InventorMasaki Hirayama
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorMasaki Hirayama
Estimating the term…
A plasma processing apparatus includes: a chamber providing a processing space; a substrate support provided inside the processing space; a first electrode provided above the processing space; a second electrode provided above the processing space and below the first electrode, the second electrode providing a plasma generation space between the first electrode and the second electrode and providing a plurality of through-holes to guide active species generated in the plasma generation space into the processing space; an introducer made of a dielectric material and configured to introduce electromagnetic waves into the plasma generation space; and a resonator including a waveguide for propagation of the electromagnetic waves to the introducer, wherein the waveguide has a length longer than ½ of a wavelength of the electromagnetic waves in the waveguide.
A plasma processing apparatus comprising:
Dependencies are inferred from the claim text.