Energy filter assembly for ion implantation system with at least one coupling element

An energy filter assembly for ion implantation system, comprising:

• an energy filter having at least one filter element absorbing the beam energy of an ion beam;
• a first filter frame;
• at least one coupling element for elastically connecting the first filter frame with the energy filter;
• at least one aperture element arranged in a plane, which is perpendicular to the beam direction of the ion beam;
• a substrate, wherein the at least one aperture element is arranged between the energy filter and the substrate such that a filtered ion beam is transmitted to the substrate;
• and
• at least one detecting element scanning the ion beam in at least one minimal scanning area, wherein the at least one detecting element is scanning the ion beam in a scanning area, wherein the scanning area extends beyond the at least one detecting element.

A method for manufacturing an energy filter assembly for ion implantation system, comprising the steps of:

• providing an energy filter having at least one filter element absorbing the beam energy of an ion beam;
• providing a first filter frame;
• and
• connecting the first filter frame with the energy filter by at least one coupling element for elastically connecting the first filter frame with the energy filter.

A method for filtering ion implantation, the method comprising the steps of:

• providing an energy filter assembly comprising an energy filter having at least one filter element, wherein a first filter frame is elastically connected with the energy filter by at least one coupling element and wherein at least one aperture element is arranged between the energy filter and a substrate;
• providing an ion beam extending across the energy filter, and the at least one coupling element;
• and
• arranging the at least one aperture element with respect to the direction of the ion beam, such that non-filtered ions of the ion beam are stopped from impacting on the substrate.

A method for manufacturing an energy filter for an ion implantation system, wherein the energy filter assembly comprises a first filter frame and at least one coupling element, and wherein method comprises the steps of:

• providing a silicon-on-insulator wafer as a substrate material having a first surface and a second surface, wherein the thickness of a buried oxide varies between 30 nm and 1.5 μm thickness;
• applying a first masking material layer and a second masking material layer for masking wet chemical potassium hydroxide etching or tetramethylammonium hydroxide etching to the first surface and the second surface of the SOI wafer;
• patterning the first masking material layer and the second masking material layer on the first surface and the second surface by using a first and second lithography process step and at least one wet or dry etching patterning step;
• cleaning of the first and second surfaces after patterning of the masking material layers;
• first wet chemical etching of the first or second surfaces using KOH or TMAH etchant;
• removing of the first masking material layer;
• applying a third masking material layer on the first surface, for masking a KOH or TMAH wet etching step OR dry etching step to the first surface of the SOI wafer;
• patterning the third masking material layers on the first surface by using a third lithography process step and at least one wet or dry etching patterning step;
• applying a KOH or TMAH wet etching step OR dry etching step to the first surface of the SOI wafer stopping on the BOX layer;
• second wet chemical etching of the first or the second surface using KOH or TMAH etchant;
• third wet chemical etching or dry etching of the second surface such that etching is stopped on the BOX layer;
• removing of the BOX layer;
• and
• removing of the masking layers on the first and second surfaces.

A method for manufacturing an energy filter assembly for an ion implantation system, the method comprising the steps of:

• providing a substrate or base layer;
• depositing a first filter layer for providing an energy filter and a first filter frame layer for providing a first filter frame;
• patterning the first filter layer and the first filter frame layer using suitable etching techniques like masked etching or sequential etching by a laser or ion beam etching device;
• depositing and patterning sequentially multiples of first filter layers and first filter frame layers;
• removing, grinding or etching the substrate or base layer to a desired substrate layer thickness or base layer thickness;
• and
• removing, grinding or etching the first filter layers and first filter frame layers cutting out at least one coupling element for elastically connecting the first filter frame with the energy filter.

A method for manufacturing an energy filter assembly for an ion implantation system, the method comprising the steps of:

• providing an energy filter;
• providing a first filter frame;
• creating at least one elastic element between the energy filter and the first filter frame by laser ablation;
• and
• separating the energy filter from first filter frame by material ablation.