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US 12,731,731 B2Granted
Multilayer capacitor with a dielectric including an aluminum nitride based compound
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsTae Kyung Lee, Jehong Kyoung, Sung-Min Cho, Taejoon Park, Sehun Park, Moonchul Lee, Joung Hun Kim
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Abstract
A multilayered capacitor according to present disclosure includes a dielectric layer including an aluminum nitride (AlN)-based compound, the aluminum nitride-based compound includes AlN, or a doped AlN compound in which AlN is doped with Ni, Co, Mn, Cr, V, Zn, Re, Ta, Nb, Ti, Zr, Mg, Sc, Er, Y, La, or a combination thereof, and a crystal orientation of the aluminum nitride-based compound is a c-axis crystal orientation.
Claims7
A multilayered capacitor, comprising
- a capacitor body including internal electrodes and dielectric layers arranged alternately;
- and
- an external electrode disposed outside the capacitor body,
- wherein the dielectric layers include an aluminum nitride (AlN)-based compound including AlN, or a doped AlN compound in which the AlN is doped with Ni, Co, Mn, Cr, V, Zn, Re, Ta, Nb, Ti, Zr, Mg, Sc, Er, Y, La, or a combination thereof,
- the dielectric layers include a plurality of dielectric grains, and a crystal orientation of the dielectric grain is c-axis crystal orientation,
- the internal electrodes include first internal electrodes and second internal electrodes with a dielectric layer disposed between each pair of adjacent first internal electrodes and second electrodes,
- the first internal electrode and second internal electrode include a conductive metal, and
- the conductive metal included in the first internal electrode is selected from the group consisting of Ru and Ti, and the conductive metal included in the second internal electrode is selected from the group consisting of Mo and W.
5 more elements
Dependencies are inferred from the claim text.