Memory device health monitoring and dynamic adjustment of device parameters
AssigneeMicron Technology, Inc.
InventorsDongxiang Liao, Tomer Tzvi Eliash
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Abstract
A method for monitoring health of a die in a memory device and dynamically adjusting a device parameter. The method includes receiving a request for performing a memory access operation on a first data unit of a memory device, and determining a value of a media state metric of the first data unit. The method further includes modifying a device parameter of the first data unit to form a modified device parameter in response to determining that the value of the media state metric of the first data unit is greater than a predetermined threshold value, and performing, using the modified device parameter, the memory access operation on the first data unit.
Claims19
A system comprising:
- a memory device;
- and
- a processing device, operatively coupled with the memory device, to perform operations comprising:
- receiving a request for performing a memory access operation on a first memory die of the memory device;
- determining a value of a media state metric of the first memory die;
- responsive to determining that the value of the media state metric of the first memory die is greater than a predetermined threshold value, modifying a device parameter of the first memory die to form a modified device parameter, wherein the device parameter specifies a voltage offset for performing one of:
- a program operation or an erase operation on the first memory die;
- and
- performing, using the modified device parameter, the memory access operation on the first memory die.
A method, comprising:
- receiving, by a processing device, a request for performing a memory access operation on a first memory die of a memory device;
- determining a value of a media state metric of the first memory die;
- responsive to determining that the value of the media state metric of the first memory die is greater than a predetermined threshold value, modifying a device parameter associated with the first memory die to form a modified device parameter, wherein the device parameter specifies a voltage offset for performing one of:
- a program operation or an erase operation on the first memory die;
- and
- performing, using the modified device parameter, the memory access operation on the first memory die.
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
- receiving a request for performing a memory access operation on a first memory die of a memory device;
- determining a value of a media state metric of the first memory die;
- responsive to determining that the value of the media state metric of the first memory die is greater than a predetermined threshold value, modifying a device parameter of the first memory die to form a modified device parameter, wherein the device parameter specifies a voltage offset for performing one of:
- a program operation or an erase operation on the first memory die;
- and
- performing, using the modified device parameter, the memory access operation on the first memory die.
Dependencies are inferred from the claim text.