Wordline defect detection circuit, wordline defect detection method, and memory device including the same

A word line defect detection method that detects a defect of at least one selected first word line that is selected from a plurality of word lines of a memory device, the word line defect detection method comprising:

• discharging the selected first word line;
• generating a detection reference current having a first magnitude;
• applying the detection reference current to the selected first word line to increase a voltage of the selected first word line in response to the selected first word line being discharged to a ground (GND) voltage;
• measuring the voltage of the selected first word line increased and generated based on the detection reference current;
• and
• detecting a defect of the selected first word line upon determining that the voltage of the selected first word line has a value less than a reference voltage,
• wherein, in the detecting of the defect of the selected first word line, in response to the voltage of the selected first word line being equal to the reference voltage, the selected first word line is determined to not be defective.

A memory device including a circuit for detecting a defect of at least one selected word line among a plurality of word lines, the memory device comprising:

• a current generating circuit configured to generate a detection reference current having a first magnitude and to apply the detection reference current to the selected word line in response to the selected first word line being discharged to at a ground (GND) voltage;
• and
• a sensing amplifier configured to measure a voltage of the selected word line generated based on the detection reference current,
• wherein in response to determining that the voltage of the selected word line has a value less than a first reference voltage, the memory device is configured to detect a defect of the selected word line.