Memory device related to a read voltage and an operation method of the memory device
AssigneeSK hynix Inc.
InventorsWon Jae Choi, Sang Sik Kim
Life of this patent
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Abstract
A memory device including: a plurality of word lines; a plurality of memory cells connected to each of the plurality of word lines, respectively; control logic configured to, based on an optimal read voltage value of a first word line among the plurality of word lines and an optimal read voltage value of a second word line among the plurality of word lines, calculates optimal read voltage values of word lines located between the first word line and the second word line by applying a position-based linear value; and a row decoder configured to apply the optimal read voltage value calculated by the control logic to a word line selected from the plurality of word lines.
Claims14
A memory device comprising:
- a plurality of word lines;
- a plurality of memory cells connected to each of the plurality of word lines, respectively;
- control logic configured to, based on an optimal read voltage value of a first word line among the plurality of word lines and an optimal read voltage value of a second word line among the plurality of word lines, calculate a linear parameter based on a difference between the optimal read voltage value of the first word line and the optimal read voltage value of the second word line and a positional distance between the first word line and the second word line, and calculate optimal read voltage values of word lines located between the first word line and the second word line by applying the calculated linear parameter;
- and
- a row decoder configured to apply the optimal read voltage value calculated by the control logic to a word line located between the first word line and the second word line selected from the plurality of word lines.
A method of operating a memory device, the method comprising:
- reading an optimal read voltage value of a first word line;
- reading an optimal read voltage value of a second word line;
- calculating a linear parameter based on a difference between the optimal read voltage value of the first word line and the optimal read voltage value of the second word line and a positional distance between the first word line and the second word line;
- calculating an optimal read voltage value of a third word line located between the first word line and the second word line by applying the calculated linear parameter;
- and
- performing a read operation of reading data from memory cells connected to the third word line by using the optimal read voltage value of the third word line.
Dependencies are inferred from the claim text.