Program failure handling in non-volatile memory systems

A memory system, comprising:

• one or more memory devices;
• and
• processing circuitry coupled with the one or more memory devices and configured to cause the memory system to:
• identify, as part of moving data from a source block to a first destination block of the memory system, a program failure associated with the first destination block;
• write a first value to a register of the memory system based at least in part on identifying the program failure at the first destination block;
• identify a second destination block for moving the data to based at least in part on writing the first value to the register of the memory system;
• move the data from the source block to the second destination block based at least in part on identifying the second destination block;
• and
• update a mapping between a logical address associated with the data and a physical address of the second destination block of based at least in part on moving the data from the source block to the second destination block.

A method by a memory system, comprising:

• identifying a program failure associated with writing data to a first address of a first block of memory cells of the memory system;
• moving data from the first block to a second block of memory cells based at least in part on identifying the program failure associated with writing the data to the first address of the first block;
• altering the data stored to the second block to include an uncorrectable error after moving the data from the first block to the second block;
• and
• performing a redundant array of independent NAND (RAIN) operation on the altered data stored to the second block based at least in part on altering the data, the RAIN operation comprising correcting the uncorrectable error in the data stored to the second block and moving the data from the second block to a third block of memory cells.

A method by a memory system, further comprising:

• identifying, as part of moving data from a source block to a first destination block of the memory system, a program failure associated with the first destination block;
• writing a first value to a register of the memory system based at least in part on identifying the program failure at the first destination block;
• identifying a second destination block for moving the data to based at least in part on writing the first value to the register of the memory system;
• moving the data from the source block to the second destination block based at least in part on identifying the second destination block;
• and
• updating a mapping between a logical address associated with the data and a physical address of the second destination block of based at least in part on moving the data from the source block to the second destination block.

A non-transitory computer-readable medium storing code at a memory system, the code comprising instructions executable by one or more processors to:

• identify a program failure associated with writing data to a first address of a first block of memory cells of the memory system;
• move data from the first block to a second block of memory cells based at least in part on identifying the program failure associated with writing the data to the first address of the first block;
• alter the data stored to the second block to include an uncorrectable error after moving the data from the first block to the second block;
• and
• perform a redundant array of independent NAND (RAIN) operation on the altered data stored to the second block based at least in part on altering the data, the RAIN operation comprising correcting the uncorrectable error in the data stored to the second block and moving the data from the second block to a third block of memory cells.