Voltage thresholds in flash devices
AssigneePure Storage, Inc.
InventorsNenad Miladinovic, Hari Kannan, Ronald Karr
Life of this patent
Estimating the term…
Abstract
A method for read voltage levels in flash memory is provided. The method includes determining to which set of pages or blocks of a flash memory device a word line connects, according to a flash memory device architecture. The method includes determining one or more optimum read voltage levels, for one or more pages of the flash memory device that are accessed by activating the word line, according to a specified number of bits per cell and the flash memory device architecture, and using the one or more optimum read voltage levels to access further pages in the set of pages or blocks of the flash memory device to which the word line connect.
Claims20
A method, comprising:
- tracking bit flips in data reads of one or more solid-state storage devices comprising flash memory in a storage system, the bit flips associated with error correction of the data reads;
- comparing, by a processor that is external to the one or more solid-state storage devices, a ratio of the bit flips to a threshold value;
- and
- adjusting a read voltage level for the flash memory in the storage system, based on the comparing.
A non-transitory computer-readable media having instructions thereupon which, when executed by a processor, cause the processor to:
- track bit flips in data reads of one or more solid-state storage devices comprising flash memory in a storage system, the bit flips associated with error correction of the data reads;
- compare, by the processor that is external to the one or more solid-state storage devices, a ratio of the bit flips to a threshold value;
- and
- adjust a read voltage level for the flash memory in the storage system, based on the comparing.
A storage system, comprising:
- one or more solid-state storage devices comprising flash memory having adjustable read voltage levels;
- and
- one or more processors that are external to the one or more solid-state storage devices, the one or more processors configured to:
- track bit flips in data reads of flash memory in a storage system, the bit flips associated with error correction of the data reads;
- compare a ratio of the bit flips to a threshold value;
- and
- adjust a read voltage level for the flash memory in the storage system, based on the comparing.
Dependencies are inferred from the claim text.