Memory control method, memory storage device and memory control circuit unit

A memory storage device, comprising:

• a connection interface unit, configured to connect to a host system;
• a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of virtual management units, each of the plurality of virtual management units comprises a plurality of physical blocks;
• and
• a memory control circuit unit, connected to the connection interface unit and the rewritable non-volatile memory module,
• wherein the memory control circuit unit is configured to acquire and utilize an array to record read counts for the plurality of virtual management units and a read count for each of the plurality of physical blocks within each of the plurality of virtual management units,
• wherein the memory control circuit unit is configured to designate a maximum read count for the physical block with a highest read count within a first virtual management unit among the plurality of virtual management units as a read count for the first virtual management unit, and
• if the read count for the first virtual management unit is greater than or equal to a read count threshold, the memory control circuit unit is configured to perform data relocation on the first virtual management unit, or the memory control circuit unit is configured to check whether the first virtual management unit is unable error correcting code (UECC).

A memory control circuit unit, comprising:

• a host interface, configured to connect to a host system;
• a memory interface, connected to a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of virtual management units, each of the plurality of virtual management units comprises a plurality of physical blocks;
• and
• a memory management circuit, connected to the host interface and the memory interface, wherein
• the memory management circuit is configured to acquire and utilize an array to record read counts for the plurality of virtual management units and a read count for each of the plurality of physical blocks within each of the plurality of virtual management units,
• wherein the memory management circuit is configured to designate a maximum read count for the physical block with a highest read count within a first virtual management unit among the plurality of virtual management units as a read count for the first virtual management unit;
• and
• if the read count for the first virtual management unit is greater than or equal to a read count threshold, the memory management circuit is configured to perform data relocation on the first virtual management unit, or the memory management circuit is configured to check whether the first virtual management unit is unable error correcting code (UECC).