Quasi-dynamic in situ ellipsometry method and system for measuring photoresist exposure process

A quasi-dynamic in situ ellipsometry system for measuring a photoresist exposure process, comprising:

• a measure module:
• configured to measure Mueller matrix information of a photoresist before exposure by a Mueller matrix ellipsometer, expose the photoresist and measure the photoresist by the Mueller matrix ellipsometer until Mueller matrix data remains unchanged, and obtain a measured Mueller matrix of the photoresist;
• a first model building module:
• configured to treat the photoresist as a uniform film, build a forward optical model, and obtain a theoretical Mueller matrix;
• a calculation module:
• configured to invert and fit the measured Mueller matrix and the theoretical Mueller matrix and obtain ellipsometric parameters, an average extinction coefficient, and a film thickness of the photoresist at different times;
• a second model building module:
• configured to build a relational model of a Dill parameter of the photoresist and optical properties of the photoresist, and an exposure model of the photoresist, wherein the optical properties comprise an extinction coefficient, an exposure light source wavelength, exposure light intensity, and a relative photoactive compound concentration of photoresist, and the Dill parameter comprises a bleachable absorbance, a non-bleachable absorbance, and a reaction rate constant;
• a third model building module:
• configured to build a relational model of a theoretical extinction coefficient and the extinction coefficient and obtain theoretical extinction coefficients of the photoresist after different exposure times;
• and
• a second calculation module:
• configured to invert and fit the average extinction coefficient and the theoretical extinction coefficient and obtain the Dill parameter.