Method of controlling semiconductor process and semiconductor processing apparatus

A method of controlling a semiconductor process, the method comprising:

• forming a first photoresist layer on at least one sample wafer;
• forming a plurality of sample overlay keys on the at least one sample wafer by radiating a first dose of extreme ultraviolet (EUV) light toward the first photoresist layer;
• measuring a sample overlay error from the plurality of sample overlay keys;
• determining a sample correction parameter for correcting the sample overlay error;
• updating the sample correction parameter into an updated sample correction parameter, based on a difference between the first dose of EUV light and a second dose of EUV light;
• forming a second photoresist layer on the at least one sample wafer;
• forming a plurality of main overlay keys on the at least one sample wafer by radiating the second dose of EUV light toward the second photoresist layer, based on the updated sample correction parameter;
• measuring a main overlay error from the plurality of main overlay keys;
• determining a main correction parameter based on the main overlay error;
• and
• performing a photolithography process on an additional wafer different from the at least one sample wafer, based on the main correction parameter.