Photonic device and method of fabricating same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Yu Liao, Tao-Cheng Liu
Life of this patent
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Abstract
A photonic device structure and method of fabricating the same. The structure includes a substrate that has a first top oxide layer and a silicon layer that is formed on the first top oxide layer. The structure further includes a plurality of rib waveguide components that are formed in the silicon layer. A first rib waveguide component of the plurality includes first contact holes having a first contact hole depth, and a second rib waveguide component of the plurality includes second contact holes having a second contact hole depth, such that the depths of the first contact hole and the second contact hole are different.
Claims17
A photonic device structure, comprising:
- a substrate including an oxide layer formed thereon;
- a silicon layer formed on the oxide layer;
- and
- a plurality of waveguide components formed in the silicon layer,
- wherein:
- a first waveguide component of the plurality of waveguide components has at least one first contact hole in the silicon layer having a first contact hole depth, and
- a second waveguide component of the plurality of waveguide components has at least one second contact hole in the silicon layer having a second contact hole depth, wherein the first contact hole depth and the second contact hole depth are different.
A photonic semiconductor device comprising:
- a substrate;
- a oxide layer formed on the substrate;
- a silicon layer formed on the oxide layer, the silicon layer comprising:
- a strip waveguide component,
- a rib to strip waveguide component, and
- a plurality of rib waveguide components, wherein:
- a first rib waveguide component of the plurality of rib waveguide components has a plurality of first contact holes in the silicon layer having a first contact hole depth, and
- a second rib waveguide component of the plurality of rib waveguide components has a plurality of second contact hole in the silicon layer having a second contact hole depth,
- wherein the first contact hole depth and the second contact hole depth are different;
- and
- a facet positioned adjacent to the silicon layer.
A method of fabricating a photonic semiconductor device, comprising:
- forming a silicon layer on a first topside oxide layer of a substrate;
- forming at least one of a strip waveguide, a rib to strip waveguide or a distributed Bragg reflector waveguide in the silicon layer;
- forming a plurality of first contact holes of a first rib waveguide in the silicon layer each having a first contact hole depth;
- forming a plurality of second contact holes of a second rib waveguide in the silicon layer each having a second contact hole depth, wherein the first contact hole depth and the second contact hole depth are different;
- doping at least one of the plurality of first contact holes to a first dopant concentration of N+ and at least a second one of the plurality of first contact holes to the first dopant concentration of P+;
- doping at least one of the plurality of second contact holes to a second dopant concentration of N+ and at least a second one of the plurality of second contact holes to the second dopant concentration of P+, wherein the first dopant concentration is different from the second dopant concentration;
- forming a first contact etch stop layer in each of the plurality of first contact holes;
- and
- forming a second contact etch stop layer formed in each of the plurality of second contact holes.
Dependencies are inferred from the claim text.