Normally-open piezoelectric MEMS valve

A semiconductor structure, comprising:

• a cantilever having a first end overlying and bonded to a substrate and further having a second end, opposite the first end, overlying an actuator cavity;
• a piezoelectric actuator on the cantilever;
• and
• a valve vane overlying and bonded to the second end of the cantilever, wherein a top surface of the valve vane is inclined upward, relative to a top surface of the substrate, from a location directly over the second end of the cantilever.

A method for forming a semiconductor structure, comprising:

• providing a semiconductor layer overlying and spaced from a substrate;
• depositing a device dielectric layer over the semiconductor layer;
• forming a piezoelectric actuator over the device dielectric layer;
• patterning the semiconductor layer and the device dielectric layer to demarcate a cantilever underlying the piezoelectric actuator;
• bonding a valve vane to the cantilever;
• patterning the substrate to form an actuator cavity at the cantilever, wherein the cantilever has a planar profile upon completing formation of the actuator cavity;
• and
• releasing the cantilever, wherein cantilever transitions from the planar profile to a curved profile during the releasing.