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AssigneeLam Research Corporation
InventorsAmir A. Yasseri, Hong Shih, Satish Srinivasan, Jeremiah Michael Dederick, Pankaj Hazarika, Lin Xu, Douglas Detert
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A method for treating a ceramic component for use in a semiconductor processing chamber, wherein the ceramic component comprises a ceramic laminate comprising a base zone comprising a first dielectric ceramic material, a protective, wherein the protective zone comprises a second dielectric ceramic material, and a transition zone between the protective zone and base zone, wherein the transition zone comprises the first dielectric ceramic material and the second dielectric ceramic material, wherein exposure of the ceramic component to UV light changes an optical property of at least a first part of the ceramic component is provided. A heat treatment of the ceramic component is provided by heating the ceramic component in a furnace to a temperature of between 400° C. to 1000° C. for a period between 2 hours to 20 hours, wherein the heat treatment changes the optical property of the first part of the ceramic component.
A ceramic component, for use in a semiconductor processing chamber, wherein the ceramic component has a process facing surface with a plurality of pits with diameters less than 5 μm that are on average less than 15% filled with debris, wherein the ceramic component is a ceramic laminate comprising:
Dependencies are inferred from the claim text.