Composite structure and semiconductor manufacturing apparatus including composite structure
AssigneeToto Ltd.
InventorsHiroaki Ashizawa, Ryoto Takizawa, Yuki Sunaba
Life of this patent
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Abstract
Disclosed is a composite structure having low-particle generation usable for a member for a semiconductor manufacturing apparatus and also the semiconductor manufacturing apparatus. The composite structure including a base material and a structure that is provided on the base material wherein the structure comprises Y2SiO5 crystal as a main component, and lattice constants of the crystal satisfy at least one of a>9.06, b>6.93, and c>6.70 or an peak intensity ratio (300)/(121) which is the ratio of (300) peak to (121) peak in X-ray diffraction of the crystal, is greater than 100% has low-particle generation and is suitably used as a member for a semiconductor apparatus.
Claims20
A composite structure comprising:
- a base material;
- and a structure provided on the base material and has a surface,
- wherein the structure comprises Y2SiO5 crystal as a main component and lattice constants of the crystal satisfy at least one of a>9.06 Å, b>6.93 Å, and c>6.70 Å.
A composite structure comprising:
- a base material;
- and a structure provided on the base material and has a surface,
- wherein the structure comprises Y2SiO5 crystal as a main component, and an peak intensity ratio (300)/(121) which is the ratio of (300) peak to (121) peak in X-ray diffraction of the crystal, is greater than 100%.
A composite structure comprising:
- a base material;
- and a structure provided on the base material and has a surface,
- wherein the structure comprises Y2SiO5 crystal as a main component, and has an indentation hardness of more than 7.5 GPa.
Dependencies are inferred from the claim text.