Back to results
US 12,727,462 B2Granted
Contact structure, semiconductor device comprising the same, and method for fabricating the same
AssigneeNanya Technology Corporation
InventorJhen-Yu Tsai
Life of this patent
Estimating the term…
Abstract
The present application discloses a contact structure, a semiconductor device including the contact structure, and a method for fabricating the semiconductor device. The contact structure includes a body portion; and an extending portion downwardly extending from the body portion and comprising a groove. The groove is recessed from a bottom surface of the extending portion, leading towards the body portion, and exposing the body portion.
Claims20
A contact structure for a substrate having a protruding portion, comprising:
- a body portion;
- and
- an extending portion downwardly extending from the body portion and comprising a groove, wherein the groove is recessed from a bottom surface of the extending portion, leading towards the body portion, and exposing the body portion;
- wherein the groove of the extending portion is arranged for receiving the protruding portion of the substrate at a position that a top surface of the extending portion, a top surface of the protruding portion of the impurity region, and a top surface of the substrate are coplanar.
1 more element
A semiconductor device, comprising:
- a substrate;
- an impurity region positioned in the substrate;
- and
- a contact structure comprising:
- a body portion positioned on the substrate;
- and
- an extending portion downwardly extending from the body portion towards the substrate and resulting in a groove, wherein the groove accommodates a protruding portion of the impurity region, which directly contacts the body portion;
- wherein a top surface of the extending portion, a top surface of the protruding portion of the impurity region, and a top surface of the substrate are coplanar.
5 more elements
Dependencies are inferred from the claim text.