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US 12,727,444 B2Granted
Methods for forming mandrels and spacers, related structures, and systems
AssigneeASM IP Holding B.V.
InventorsDaniele Piumi, Ivo Raaijmakers
Life of this patent
Estimating the term…
Abstract
Methods for patterning and forming structures, as well as related structures and systems are disclosed. The methods comprise forming a mandrel on a substrate. Forming the mandrel comprises executing a plurality of etching cycles to thin a structure.
Claims20
A method for forming a spacer, the method comprising
- providing a system, the system comprising a first reaction chamber and a second reaction chamber;
- forming a mandrel on a substrate in the first reaction chamber by;
- providing the substrate to the first reaction chamber, the substrate comprising a material layer and a structure, the structure comprising a distal portion, a proximal portion, and two substantially parallel sidewalls;
- and
- carrying out a plurality of etching cycles, ones from the plurality of etching cycles comprising subsequently executing a conversion pulse and a volatilization pulse,
- wherein the conversion pulse comprises exposing the substrate to a conversion reactant, thereby forming a converted surface layer on the sidewalls, and
- wherein the volatilization pulse comprises exposing the substrate to a volatilization reactant, thereby volatilizing the converted surface layer;
- providing the substrate to the second reaction chamber while keeping the substrate in vacuum or while keeping the substrate in an inert gas;
- forming an etchable layer on the substrate in the second reaction chamber;
- etching the etchable layer by a directional etch;
- and
- selectively etching the mandrel vis-à-vis the etchable layer and the material layer.
9 more elements
A method of patterning a substrate, the method comprising
- providing a substrate comprising a patternable layer;
- forming a structural layer on the patternable layer;
- forming a photosensitive layer on the structural layer;
- exposing the photosensitive layer to electromagnetic radiation through a mask, thereby forming exposed areas of the patternable layer and unexposed areas of the patternable layer;
- selectively removing one of the exposed areas and the unexposed areas;
- etching the patternable layer in one of the exposed areas and the unexposed areas, thereby forming a plurality of structures on the substrate;
- removing the photosensitive layer from the substrate;
- forming a plurality of spacers on the substrate by;
- providing the substrate to a reaction chamber, the substrate comprising a material layer and each structure of the plurality of structures comprising a distal portion, a proximal portion, and two substantially parallel sidewalls;
- and
- carrying out a plurality of etching cycles, ones from the plurality of etching cycles comprising subsequently executing a conversion pulse and a volatilization pulse,
- wherein the conversion pulse comprises exposing the substrate to a conversion reactant, thereby forming a converted surface layer on the sidewalls, and
- wherein the volatilization pulse comprises exposing the substrate to a volatilization reactant, thereby volatilizing the converted surface layer;
- and
- selectively etching the patternable layer vis-à-vis the plurality of spacers.
12 more elements
A method of patterning a substrate, the method comprising
- providing a substrate comprising a patternable layer;
- forming a photosensitive layer on the patternable layer;
- exposing the photosensitive layer to electromagnetic radiation through a mask, thereby forming exposed areas of the patternable layer and unexposed areas of the patternable layer;
- forming a plurality of structures on one of the exposed areas and the unexposed areas of the patternable layer;
- forming a plurality of mandrels on the substrate by:
- providing the substrate to a reaction chamber, the substrate comprising a material layer and each structure of the plurality of structures comprising a distal portion, a proximal portion, and two substantially parallel sidewalls;
- and
- carrying out a plurality of etching cycles, ones from the plurality of etching cycles comprising subsequently executing a conversion pulse and a volatilization pulse,
- wherein the conversion pulse comprises exposing the substrate to a conversion reactant, thereby forming a converted surface layer on the sidewalls, and
- wherein the volatilization pulse comprises exposing the substrate to a volatilization reactant, thereby volatilizing the converted surface layer;
- and
- selectively etching the patternable layer vis-à-vis the plurality of mandrels.
9 more elements
Dependencies are inferred from the claim text.