Substrate processing apparatus

A substrate processing apparatus comprising:

• a vacuum chamber;
• a rotary table rotatably provided in the vacuum chamber;
• a stage that has a rotation center at a position spaced apart from a rotation center of the rotary table and that is rotatable relative to the rotary table;
• and
• a support configured to support at least either the rotary table or the stage, the support having a thermal expansion coefficient greater than a thermal expansion coefficient of the rotary table or the stage that is supported,
• wherein the rotary table or the stage includes a protruding portion that protrudes toward the support,
• wherein the support includes a base portion that supports the protruding portion, an insertion portion that protrudes from a center of the base portion and that is inserted into the protruding portion, and an outer edge protruding portion that protrudes from the base portion outside an outer circumferential surface of the protruding portion, and
• wherein an outer clearance formed between the outer edge protruding portion and the protruding portion is set to be smaller than an inner clearance formed between the insertion portion and the protruding portion at a first temperature, and the outer clearance becomes greater than the inner clearance at a second temperature higher than the first temperature,
• wherein an inner circumferential surface of the outer edge protruding portion faces the outer circumferential surface of the protruding portion, and an outer circumferential surface of the insertion portion faces an inner circumferential surface of the protruding portion.