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US 12,727,404 B2Granted
Deposition system and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Hsi Wang, Yen-Yu Chen
Life of this patent
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Abstract
A deposition system is provided capable of extending the chamber running time by preventing the target and other components from deformation due to thermal stress from the sputtering process by maintaining the temperature within the predetermined temperature range. The deposition system includes a substrate process chamber, a target within the substrate process chamber, and a plurality of grooves formed on the target in a circular formation. The plurality of grooves includes a first groove on a center portion of the target and a second groove on a periphery portion of the target.
Claims20
A target, comprising:
- a center area including a center;
- a periphery area extends around the center area;
- an edge spaced apart from the center area, the edge extends around the periphery area and the center area;
- a first surface and a second surface opposite to the first surface;
- a plurality of curved grooves that extend into the first surface of the target, each respective curved groove of the plurality of curved grooves terminates before reaching the second surface, the plurality of curved grooves are curved and extend from the center to the edge by extending across the center area and the periphery area, and each respective curved groove of the plurality of curved grooves converges with other respective curved grooves of the plurality of curved grooves at the center, the plurality of curved grooves are configured to, in operation, overlap an orbital pattern of at least one magnet when depositing a material onto a semiconductor substrate present within a substrate process chamber;
- a plurality of first circular grooves that intersect the plurality of curved grooves, the plurality of first circular grooves include:
- a first group of the plurality of first circular grooves that are concentric with each other;
- and
- a second group of the plurality of first circular grooves that are concentric with each other and are spaced apart from the first group of the plurality of first circular grooves;
- a plurality of second circular grooves that intersect the plurality of curved grooves, the first group of the plurality of first circular grooves, and the second group of the plurality of first circular grooves.
7 more elements
A target, comprising:
- a center area including a center;
- a periphery area extends around the center area;
- an edge spaced apart from the center area, the edge extends around the periphery area and the center area;
- a first surface and a second surface opposite to the first surface;
- and
- a plurality of first circular grooves that extend into the first surface of the target, wherein each respective first circular groove of the plurality of first circular grooves is concentric with each other;
- a plurality of second circular grooves that extend into the first surface of the target, wherein each respective second circular groove of the plurality of second circular grooves is concentric with each other and is eccentric relative to the respective first circular grooves of the plurality of first circular grooves, and wherein:
- the plurality of first circular grooves is configured to, in operation, overlap at least one respective orbital pattern of at least one of a first magnet or a second magnet when depositing a material onto a semiconductor substrate present within a semiconductor substrate process chamber, and
- the plurality of second circular grooves is configured to, in operation, overlap at least one respective orbital pattern of at least one of the first magnet or the second magnet when depositing the material onto the semiconductor substrate present within the semiconductor substrate process chamber.
6 more elements
A method, comprising:
- depositing a material from a target onto a semiconductor substrate in a semiconductor substrate process chamber, the depositing including:
- moving a first magnet within a cooling space;
- circulating coolant in the cooling space to expose a top surface of the target to the coolant circulated through the cooling space, the top surface delimits the cooling space and includes:
- a plurality of curved grooves that are exposed to the coolant circulated through the cooling space;
- a plurality of first circular grooves that extend into the first surface of the target, wherein each respective first circular groove of the plurality of first circular grooves is concentric with each other;
- and
- a plurality of second circular grooves that extend into the first surface of the target, wherein each respective second circular groove of the plurality of second circular grooves is concentric with each other and is eccentric relative to the respective first circular grooves of the plurality of first circular grooves;
- depositing a film of the material on the semiconductor substrate.
5 more elements
Dependencies are inferred from the claim text.