Semiconductor light emitting diode including passivation layer having different thicknesses

A semiconductor light emitting device, comprising:

• a first conductivity type semiconductor;
• an active layer on the first conductivity type semiconductor;
• a second conductivity type semiconductor on the active layer;
• an electrode layer on the second conductivity type semiconductor;
• and
• a passivation layer covering a side surface of each of the first conductivity type semiconductor, the active layer, the second conductivity type semiconductor, and the electrode layer,
• wherein an angle between a lower surface and the side surface of the electrode layer is about 45° or more and about 90° or less, and
• wherein the passivation layer comprises:
• a first portion on the side surface of the first conductivity type semiconductor, the first portion having a first thickness, and
• a second portion on the side surface of the electrode layer, the second portion having a second thickness different from the first thickness, and
• wherein the first conductivity type semiconductor has a thickness in a stacking direction of the first conductivity type semiconductor, the active layer, and the second conductivity type semiconductor that is greater than a width of the first conductivity type semiconductor.