Imaging device and electronic device

An imaging device, comprising:

• a semiconductor substrate;
• and
• a plurality of imaging elements arranged in a matrix on the semiconductor substrate along a row direction and a column direction, and configured to perform photoelectric conversion on incident light,
• wherein each of the plurality of imaging elements comprises:
• a plurality of pixels provided adjacent to each other in the semiconductor substrate and containing impurities of a first conductivity type;
• a pixel separation wall that separates the plurality of pixels;
• and
• an on-chip lens provided above a light receiving surface of the semiconductor substrate so as to be shared by the plurality of pixels,
• wherein the pixel separation wall is provided so as to extend from the light receiving surface to a middle of the semiconductor substrate along a thickness direction of the semiconductor substrate,
• wherein a region positioned on a side opposite to the light receiving surface with respect to the pixel separation wall in the thickness direction of the semiconductor substrate contains impurities of a second conductivity type opposite to the first conductivity type,
• wherein the plurality of imaging elements further includes a light shielding film provided along the element separation wall on the element separation wall when viewed from above the light receiving surface, and
• wherein the light shielding film is formed of copper, titanium, molybdenum or nickel.

An electronic device, comprising:

• an imaging device comprising:
• a semiconductor substrate;
• and
• a plurality of imaging elements arranged in a matrix on the semiconductor substrate along a row direction and a column direction, and configured to perform photoelectric conversion on incident light,
• wherein each of the plurality of imaging elements comprises:
• a plurality of pixels provided adjacent to each other in the semiconductor substrate and containing impurities of a first conductivity type;
• an element separation wall surrounding the plurality of pixels and provided so as to penetrate the semiconductor substrate;
• an on-chip lens provided above a light receiving surface of the semiconductor substrate so as to be shared by the plurality of pixels;
• and
• a first separation portion provided in a region surrounded by the element separation wall to separate the plurality of pixels,
• wherein the first separation portion is provided so as to extend in a thickness direction of the semiconductor substrate,
• wherein a first diffusion region containing impurities of a second conductivity type opposite to the first conductivity type is provided in a region positioned around the first separation portion and extending in the thickness direction of the semiconductor substrate, and
• wherein a third diffusion region containing impurities of a first conductivity type is provided between the plurality of pixels and aligned with the first diffusion region containing impurities of the second conductivity type.