Back to results
US 12,727,274 B2Granted
Image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorsYoungrae Kim, Sachoun Park, Daeuk Jung, Jeongjin Cho
Life of this patent
Estimating the term…
Abstract
An image sensor includes: a first substrate including: a first side, a second side, a pixel array region, and an edge region; and a micro lens array on the second side, which includes micro lenses. Each of the micro lenses includes a first lens layer and a second lens layer on the first lens layer. A second mean curvature radius of the second lens layer is smaller than a first mean curvature radius of the first lens layer. A first eccentric degree of the second lens layer on an edge of the pixel array region is greater than a second eccentric degree of the second lens layer at a center of the pixel array region.
Claims20
An image sensor comprising:
- a first substrate comprising:
- a first side,
- a second side that is opposite to the first side,
- a pixel array region comprising unit pixels, and
- an edge region surrounding the pixel array region;
- and
- a micro lens array on the second side, the micro lens array comprising micro lenses,
- wherein each of the micro lenses comprises a first lens layer and a second lens layer on the first lens layer,
- wherein a second mean curvature radius of the second lens layer is smaller than a first mean curvature radius of the first lens layer,
- wherein a first eccentric degree of the second lens layer on an edge of the pixel array region is greater than a second eccentric degree of the second lens layer at a center of the pixel array region, wherein each of the first eccentric degree and the second eccentric degree corresponds to a degree to which a center optical axis of the second lens layer deviates from the center optical axis of the first lens layer, and
- wherein a direction in which the center optical axis of the second lens layer is eccentric from the center optical axis of the first lens layer is toward the center of the pixel array region.
8 more elements
An image sensor comprising:
- a first substrate comprising:
- a first side,
- a second side that is opposite to the first side,
- a pixel array region comprising unit pixels, and
- an edge region;
- an antireflection structure on the second side;
- a pixel separator on the first substrate and separating the unit pixels;
- a color filter in the antireflection structure;
- a micro lens array on the color filter and comprising micro lenses;
- a first interlayer insulating layer on the first side of the first substrate;
- a first wiring layer in the first interlayer insulating layer;
- a second interlayer insulating layer below the first interlayer insulating layer;
- a second wiring layer in the second interlayer insulating layer;
- and
- a second substrate below the second interlayer insulating layer,
- wherein each of the micro lenses comprises a first lens layer and a second lens layer on the first lens layer,
- wherein a second mean curvature radius of the second lens layer is smaller than a first mean curvature radius of the first lens layer,
- wherein a first eccentric degree of the second lens layer on an edge of the pixel array region is greater than a second eccentric degree of the second lens layer at a center of the pixel array region, wherein each of the first eccentric degree and the second eccentric degree corresponds to a degree to which a center optical axis of the second lens layer deviates from the center optical axis of the first lens layer, and
- wherein a direction in which the center optical axis of the second lens layer is eccentric from the center optical axis of the first lens layer is toward a center of the pixel array region.
16 more elements
An image sensor comprising:
- a first sub-chip comprising:
- a first substrate comprising:
- a first side,
- a second side that is opposite to the first side,
- a pixal array region comprising unit pixels, and
- an edge region,
- an antireflection structure on the second side,
- a pixel separator on the first substrate and separating the unit pixels,
- a color filter in the antireflection structure,
- a micro lens array on the color filter,
- a first interlayer insulating layer on the first side of the first substrate, and
- a first wiring layer in the first interlayer insulating layer;
- a second sub-chip comprising:
- a second substrate below the first interlayer insulating layer,
- a second interlayer insulating layer below the second substrate, and
- a second wiring layer in the second interlayer insulating layer;
- a third sub-chip comprising:
- a third interlayer insulating layer below the second interlayer insulating layer,
- a third wiring layer in the third interlayer insulating layer, and
- a third substrate below the third interlayer insulating layer, and
- micro lenses comprising a first lens layer and a second lens layer on the first lens layer,
- wherein a second mean curvature radius of the second lens layer is smaller than a first mean curvature radius of the first lens layer,
- wherein a first eccentric degree of the second lens layer disposed on an edge of the pixel array region is greater than a second eccentric degree of the second lens layer disposed at a center of the pixel array region, wherein each of the first eccentric degree and the second eccentric degree corresponds to a degree to which a center optical axis of the second lens layer deviates from the center optical axis of the first lens layer, and
- wherein a direction in which the center optical axis of the second lens layer is eccentric from the center optical axis of the first lens layer is toward a center of the pixel array region.
21 more elements
Dependencies are inferred from the claim text.