Imaging device including a photoelectric converter and a capacitive element having a dielectric film sandwiched between electrodes and a mode switching transistor

A camera system comprising:

• a lens;
• and
• an imaging device that receives a light through the lens;
• wherein
• the imaging device including:
• a semiconductor substrate;
• a photoelectric converter that is configured to convert the light into a signal charge and that is stacked on the semiconductor substrate;
• a node to which the signal charge is input;
• a transistor having a source and a drain, one of the source and the drain being connected to the node;
• and
• a capacitive element connected between the transistor and a voltage source or a ground, wherein
• the transistor is configured to switch between a first state and a second state, a capacitance value of a first capacitance for storing the signal charge in the first state being different from a capacitance value of a second capacitance for storing the signal charge in the second state, and
• in a cross-sectional view, the capacitive element is located between the semiconductor substrate and the photoelectric converter.

A camera system comprising:

• a lens;
• and
• an imaging device that receives a light through the lens;
• wherein
• the imaging device including:
• a semiconductor substrate;
• a photoelectric converter that is configured to convert incident light into a signal charge and that is stacked on the semiconductor substrate;
• a node to which the signal charge is input;
• a first transistor having a source and a drain, one of the source and the drain being connected to the node;
• and
• a capacitive element connected between the other of the source and the drain of the first transistor and a voltage source or a ground, wherein
• in a cross-sectional view, the capacitive element is located between the semiconductor substrate and the photoelectric converter.