Solid-state imaging element and imaging device with first pixel for gradation signal and second pixel for event detection having larger photoelectric conversion portion volume

An imaging device, comprising:

• a solid-state imaging element including
• a pixel array unit comprising a plurality of pixels, wherein
• each pixel of the plurality of pixels includes a photoelectric conversion portion,
• the plurality of pixels includes a first pixel and a second pixel,
• the first pixel is configured to obtain a gradation signal that indicates an intensity of received light,
• the second pixel is configured to detect a change in an amount of the received light exceeds a threshold value,
• the first pixel includes a first volume of the photoelectric conversion portion,
• the second pixel includes a second volume of the photoelectric conversion portion included in the second pixel being, and
• the second volume is larger than the first volume;
• and
• a signal processing unit configured to:
• receive a captured image;
• and
• process the captured image based on the gradation signal obtained by the first pixel.

A solid-state imaging element, comprising:

• a semiconductor substrate;
• a first pixel including:
• a first photoelectric conversion portion in the semiconductor substrate in a cross-sectional view;
• a first charge accumulation portion;
• and
• a first trench between the first photoelectric conversion portion and the first charge accumulation portion;
• a second pixel including:
• a second photoelectric conversion portion, in the semiconductor substrate, adjacent to the first pixel in the cross-sectional view;
• a third photoelectric conversion portion;
• a fourth trench in the third photoelectric conversion portion;
• and
• a second trench between the second photoelectric conversion portion and the third photoelectric conversion portion;
• and
• a third trench between the first charge accumulation portion and the second photoelectric conversion portion in the cross-sectional view.