Diode with light-sensitive intrinsic region

A method for producing a diode comprising the steps:

• providing a light-sensitive intrinsic region sandwiched laterally between a p-doped region and an n-doped region in a direction transverse to a direction of light propagation in the diode by sequentially providing the p-doped region in-situ doped and the n-doped region in-situ doped, and not doping the intrinsic region, wherein the intrinsic region is produced with a maximal lateral extension between two lateral ends of the intrinsic region of equal to or below 400 nm,
• wherein the p-doped region is made of a first material doped with a first type of dopant and the n-doped region is made of a third material doped with a second type of dopant, the first material including silicon or silicon germanium, the third material including silicon or silicon germanium, and wherein the intrinsic region is made of a second material different to at least one of the first material and the third material, the second material including germanium, germanium tin, or silicon germanium.