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US 12,727,254 B2Granted
Electrostatic device
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsJie Zeng, Kyong Jin Hwang, Namchil Mun, Shiang Yang Ong
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to electrostatic devices and methods of manufacture. The structure includes: a device having a collector, an emitter, and a base; an isolation structure extending between the base and the collector; a high resistivity film over the isolation structure; and a silicide blocking layer partially covering the high resistivity film, the isolation structure and the collector.
Claims12
A structure comprises:
- a device comprising a collector, an emitter, and a base;
- an isolation structure extending between the base and the collector;
- a high resistivity film over the isolation structure;
- a silicide blocking layer partially covering the high resistivity film, the isolation structure and the collector;
- and
- a P-drift region which surrounds the collector and a first deep trench isolation structure touching the P-drift region.
3 more elements
A structure comprising:
- a device comprising a collector, an emitter, and a base;
- an isolation structure extending between the base and the collector;
- a high resistivity film over the isolation structure;
- a silicide blocking layer partially covering the high resistivity film, the isolation structure and the collector;
- and
- an N-type drift region and a P+ buried layer under the N-type drift region, the N-type drift region and the P+ buried layer having a gap between sides filled with a semiconductor material, and the emitter spans the gap.
3 more elements
A method comprises:
- forming a device comprising a collector, an emitter, and a base;
- forming an isolation structure extending between the base and the collector;
- forming a high resistivity film over the isolation structure;
- forming a silicide blocking layer partially covering the high resistivity film, the isolation structure and the collector;
- and
- forming a P-drift region which surrounds the collector and a first deep trench isolation structure touching the P-drift region.
3 more elements
Dependencies are inferred from the claim text.