Method of manufacturing a gate-all-around transistor using support cantilevers on opposing ends of a multilayered stack

A method of fabricating a semiconductor device, comprising:

• forming a patterned multilayered stack comprising sacrificial layers alternatingly stacked with channel layers on a substrate, the patterned multilayered stack having opposing sidewalls and opposing ends;
• forming cantilever supports on the substrate, each cantilever support being in contact with a respective opposing end of the patterned multilayered stack;
• forming a gate-all-around (GAA) structure around each channel layer while the opposing ends of the multilayered stack are supported by the cantilever supports;
• removing the cantilever supports from the opposing ends of the patterned multilayered stack to expose end portions of each channel layer;
• and
• forming source-drain (S-D) regions on the exposed end portions of each respective channel layer,
• wherein the removing the cantilever supports comprises etching the cantilever supports and a portion of the opposing ends of the patterned multilayered stack to expose ends of each channel layer and ends of the GAA structure formed around the respective channel layer, with the ends of the GAA structure being aligned with the ends of the channel layers.