Three-dimensional memory devices and manufacturing methods thereof and three-dimensional memories

A three-dimensional memory, comprising:

• a three-dimensional memory device comprising at least two memory cells that are stacked sequentially, wherein the at least two memory cells include a first memory cell and at least one second memory cell stacked on the first memory cell, and a memory cell of the at least two memory cells comprises:
• a memory array device and a CMOS device that are stacked and electrically connected with each other;
• and
• a first set of contacts disposed on a side of the memory array device facing away from the CMOS device and connected with the CMOS device,
• wherein the second memory cell further comprises a second set of contacts that is disposed on a side of the CMOS device of the second memory cell facing away from the memory array device of the second memory cell and is connected with the CMOS device of the second memory cell,
• wherein the memory array device of the first memory cell is bonded with the CMOS device of an adjacent second memory cell, and the first set of contacts of the first memory cell is correspondingly connected with the second set of contacts of the adjacent second memory cell,
• wherein, when there is one second memory cell, the second memory cell is an outer second memory cell stacked on the first memory cell, and the first set of contacts of the outer second memory cell is used to connect to an external device, and
• wherein, when there are multiple second memory cells, the multiple second memory cells are sequentially stacked on the first memory cell, and, for two adjacent ones of the second memory cells, the first set of contacts of a second memory cell close to the first memory cell is correspondingly connected with the second set of contacts of a second memory cell far away from the first memory cell, a second memory cell farthest away from the first memory cell along a stacking direction is defined as the outer second memory cell, and the first set of contacts of the outer second memory cell is used to connect to the external device.