Solid-state imaging element, imaging device, and solid-state imaging element control method
AssigneeSony Semiconductor Solutions Corporation
InventorLuonghung Asakura
Life of this patent
Estimating the term…
Abstract
To improve the image quality in a solid-state imaging element that performs exposure by a global shutter scheme. The solid-state imaging element includes a photoelectric conversion film, an upstream circuit, and a sample-hold circuit. The photoelectric conversion film converts incident light into a charge. The upstream circuit sequentially generates a reset level according to an amount of the charge at a time of a start of exposure and a signal level according to an amount of the charge at a time of an end of exposure, and outputs the reset level and the signal level to an upstream node. The sample-hold circuit causes the reset level and the signal level to be held at mutually different capacitive elements.
Claims18
A solid-state imaging element, comprising:
- a photoelectric conversion film configured to convert incident light into a first charge;
- an upstream circuit configured to:
- sequentially generate a reset level based on an amount of the first charge at a time of a start of exposure;
- sequentially generate a signal level based on an amount of the first charge at a time of an end of exposure;
- and
- output the reset level and the signal level to an upstream node, wherein
- the upstream circuit includes a regulator, and
- the regulator is configured to output a generation voltage to the upstream node;
- and
- a sample-hold circuit that includes a plurality of capacitive elements, wherein
- the plurality of capacitive elements is configured to hold the generation voltage, and
- the sample-hold circuit is configured to cause the reset level and the signal level to be held at mutually different capacitive elements of the plurality of capacitive elements.
An imaging device, comprising:
- a photoelectric conversion film configured to convert incident light into a charge;
- an upstream circuit configured to
- sequentially generate a reset level based on an amount of the charge at a time of a start of exposure;
- sequentially generate a signal level based on an amount of the charge at a time of an end of exposure;
- and
- output each of the reset level and the signal level to an upstream node, wherein
- the upstream circuit includes a regulator, and
- the regulator is configured to output a generation voltage to the upstream node;
- a sample-hold circuit that includes a plurality of capacitive elements, wherein
- the plurality of capacitive elements is configured to hold the generation voltage, and
- the sample-hold circuit is configured to cause the reset level and the signal level to be held at mutually different capacitive elements of the plurality of capacitive elements;
- and
- a signal processing circuit configured to process the reset level and the signal level.
A solid-state imaging element control method, comprising:
- in a solid-state imaging element that includes a photoelectric conversion film, an upstream circuit, and a sample-hold circuit:
- converting, by the photoelectric conversion film, incident light into a charge;
- sequentially generating, by the upstream circuit, a reset level based on an amount of the charge at a time of a start of exposure;
- sequentially generating, by the upstream circuit, a signal level based on an amount of the charge at a time of an end of exposure;
- outputting, by a regulator of the upstream circuit, a generation voltage to an upstream node;
- holding, by a plurality of capacitive elements of the sample-hold circuit, the generation voltage;
- outputting, by the upstream circuit, the reset level and the signal level to the upstream node;
- and
- causing, by the sample-hold circuit, the reset level and the signal level to be held at mutually different capacitive elements of the plurality of capacitive elements.
Dependencies are inferred from the claim text.