RF front-end chip, RF switch module, and RF communication device
AssigneeHangzhou Geo-chip Technology Co., Ltd.
InventorsRuili Wu, Yan Li
Life of this patent
Estimating the term…
Abstract
The present disclosure provides an RF front-end chip, an RF switch module, and an RF communication device. The RF front-end chip includes a logic control circuit, a switching circuit, and an amplifier module assembly that are integrated onto an integrated circuit die, where the logic control circuit is connected to the switching circuit and configured to control the switching circuit, and the switching circuit is integrated into the amplifier module assembly and precedes one or more amplifiers of the amplifier module assembly. By utilizing the RF front-end chip, the integration level of the chip can be improved, and the cost of the chip can be reduced.
Claims19
An RF front-end chip, comprising a logic control circuit, a switching circuit and an amplifier module assembly that are integrated onto an integrated circuit die, wherein the logic control circuit is connected to the switching circuit and configured to control the switching circuit, and the switching circuit is integrated into the amplifier module assembly and precedes one or more amplifiers of the amplifier module assembly,
- wherein the amplifier module assembly comprises a low-frequency amplification module, a mid-frequency amplification module and a high-frequency amplification module,
- wherein the low-frequency amplification module comprises a first switch unit and a first amplifier unit, with the first switch unit preceding the first amplifier unit;
- the mid-frequency amplification module comprises a first-stage amplification unit, a second switch unit and a second-stage amplification unit, with the second switch unit being provided between the first-stage amplification unit and the second-stage amplification unit;
- and the high-frequency amplification module comprises a second amplifier unit,
- wherein the first switch unit comprises a first switch and a second switch, the first amplifier unit comprises a first branched amplifier and a second branched amplifier, wherein the first switch and the second switch have respective input terminals each configured to receive a low-frequency band RF signal, with an output terminal of the first switch being electrically connected to the first branched amplifier and an output terminal of the second switch being electrically connected to the second branched amplifier.
An RF switch module configured to be applicable to amplification of an RF signal, the RF switch module comprising a first branch, a second branch and a third branch that are arranged in parallel, wherein each branch of the first branch, the second branch and the third branch comprises a switch configured to connect or disconnect said each branch comprising the switch based on a received logic control signal,
- wherein switches of the first branch, the second branch and the third branch are respectively connected to a first field-effect tube, a second field-effect tube and a third field-effect tube, where the first field-effect tube, the second field-effect tube and the third field-effect tube have respective input terminals each connected to a signal output terminal of a fourth field-effect tube, with a signal input terminal of the fourth field-effect tube being configured to receive an input RF signal, and any one field-effect tube of the first field-effect tube, the second field-effect tube and the third field-effect tube being controlled by a signal transmitted in one of the first branch, the second branch and the third branch that corresponds to said any one field-effect tube.
Dependencies are inferred from the claim text.