Apparatus for treating substrate and method for treating substrate
AssigneePsk Inc.
InventorsKwang Sung Yoo, Jong Chan Lee
Life of this patent
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Abstract
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit positioned within the treating space and configured to apply a power and to support a substrate; and a plasma control unit configured to change a characteristic of a plasma formed in the treating space, and wherein the plasma control unit includes: a gap control plate positioned above the support unit; and a plate driver changing a position of the gap control plate, and the plate driver maintains a gap between a bottom surface of the gap control plate and a top surface of the support plate while changing a characteristic of the plasma by changing the position of the gap control plate.
Claims13
A substrate treating apparatus comprising:
- a housing having a treating space;
- a support unit positioned within the treating space and configured to apply a power and to support a substrate, the support unit including a support plate;
- a plasma control unit configured to change a characteristic of a plasma formed in the treating space;
- and
- a top edge electrode positioned above an edge region of the substrate supported on the support plate, wherein a position of the top edge electrode is fixed within the treating space, and
- wherein the plasma control unit includes:
- a gap control plate positioned above the support unit;
- and
- a plate driver changing a position of the gap control plate, and
- the plate driver maintains a gap between a bottom surface of the gap control plate and a top surface of the support plate while changing a characteristic of the plasma by changing the position of the gap control plate;
- wherein the plate driver couples with the gap control plate to move the gap control plate in a top/down direction,
- the support unit further includes a lift unit configured to move the support plate in the top/down direction, and
- the lift unit moves the support unit in a same direction as the gap control plate moves in a same distance as the gap control plate moves in the top/down direction so the gap between the bottom surface of the gap control plate and the top surface of the support plate is maintained.
A substrate treating apparatus comprising:
- a housing having a treating space;
- a support unit positioned within the treating space and configured to support a substrate, the support unit including a support plate;
- a lift unit configured to move the support plate;
- a plasma control unit configured to change a characteristic of a plasma formed in the treating space;
- and
- a top edge electrode positioned to surround an outer side surface of a gap control plate, and which is fixedly coupled to a bottom end of an electrode plate installed on a ceiling of the housing, and
- wherein the plasma control unit includes:
- the gap control plate positioned above the support unit;
- and
- a plate driver moving the gap control plate, and
- the plate driver changes the characteristic of the plasma by moving the gap control plate, and
- the lift unit is sync controlled with the plate driver so a gap between a bottom surface of the gap control plate and a top surface of the support plate is maintained at a reference gap set according to a recipe,
- wherein the plate driver moves the gap control plate in a top/down direction, and
- the lift unit is sync controlled with the plate driver to move the support unit in a same direction as the gap control plate moves in a same distance as the gap control plate moves so the reference gap is maintained.
A substrate treating method comprising:
- treating a substrate by generating a plasma in an edge region of a substrate due to an electrical interaction between a top edge electrode in a ring shape fixedly positioned above the edge region, a bottom edge electrode in a ring shape positioned below the edge region, and a support plate applying a power and supporting the substrate;
- changing a characteristic of the plasma by changing a top/down position of a gap control plate positioned at an inner side of the top edge electrode;
- and
- maintaining a gap between a top surface of the support plate and a bottom surface of the gap control plate to a reference gap set according to a recipe while the plasma is generated,
- wherein the support plate moves in a same direction as the gap control plate moves and a same distance as the gap control plate moves to maintain the reference gap.
Dependencies are inferred from the claim text.