Wordline ramp rate monitor for early detection of defect activation
AssigneeMicron Technology, Inc.
InventorsFulvio Rori, Pitamber Shukla, Chiara Cerafogli, Erasmo Jose B. Vargas
Life of this patent
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Abstract
A methods and system directed to a wordline ramp rate monitor for early detection of defect activation are disclosed. A memory access directed to a wordline is initiated. Based on an applied ramping voltage, a ramp rate of the wordline is determined. Responsive to determining that the ramp rate satisfied a defect condition, the memory access operation is aborted.
Claims20
A method comprising:
- initiating a memory access operation directed to a wordline;
- causing a ramping voltage to be applied to the wordline during the memory access operation;
- detecting the ramping voltage on the wordline;
- determining, based on the detected ramping voltage, a ramp rate of the wordline;
- and
- responsive to determining that the ramp rate satisfies a defect condition, causing the memory access operation to be aborted.
A system comprising:
- a memory device;
- and
- a processing device, operatively coupled to the memory device, to perform operations comprising:
- initiating a memory access operation directed to a wordline;
- applying a ramping voltage to the wordline;
- responsive to a first voltage detector sensing the ramping voltage at a first voltage level, enabling a counter;
- responsive to a second voltage detector sensing the ramping voltage at a second voltage level, disabling the counter;
- and
- responsive to determining that a value of the counter satisfies a criterion, causing the memory access operation to be aborted.
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
- initiating a memory access operation directed to a wordline;
- causing a ramping voltage to be applied to the wordline during the memory access operation:
- detecting the ramping voltage on the wordline;
- determining, based on the detected ramping voltage, a ramp rate of the wordline;
- and
- responsive to determining that the ramp rate satisfies a defect condition, causing the memory access operation to be aborted.
Dependencies are inferred from the claim text.