High voltage transfer device and a memory device including the same

An electronic device comprising:

• a one time programmable (OTP) memory cell that includes a program transistor and a read transistor;
• and
• a high voltage transfer device configured to level-shift an external high voltage to an internal voltage,
• wherein the high voltage transfer device includes:
• a first PMOS transistor having a first end connected to an external high voltage terminal;
• a second PMOS transistor having a first end connected to a second end of the first PMOS transistor and a second end connected to a gate of the program transistor;
• an enable circuit configured to receive an enable signal and generate a gate voltage of the second PMOS transistor;
• and
• a level shifter connected to the enable circuit by a feedback path and configured to generate a gate voltage of the first PMOS transistor based upon the gate voltage of the second PMOS transistor provided through the feedback path.

A memory device comprising:

• a one time programmable (OTP) memory cell having a program transistor and a read transistor;
• and
• a high voltage transfer device includes a first PMOS transistor having a first end connected to an external high voltage terminal, and a second PMOS transistor having a first end connected to a second end of the first PMOS transistor and a second end connected to a gate of the program transistor,
• wherein the high voltage transfer device is configured to generate a gate voltage of the second PMOS transistor based on an enable signal being activated,
• wherein the high voltage transfer device is configured to generate a gate voltage of the first PMOS transistor corresponding to the gate voltage of the second PMOS transistor, and
• wherein the high voltage transfer device is configured to, based on the second PMOS transistor and the first PMOS transistor being sequentially driven, provide an external high voltage to a gate terminal of the program transistor in a stepwise manner.