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US 12,725,579 B2Granted
Display device and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHidetomo Kobayashi, Kouhei Toyotaka
Life of this patent
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Abstract
A display device that can be easily and more flexibly designed is provided. The display device includes a pixel circuit and a driver circuit in a display portion. The driver circuit includes a plurality of pulse output circuits. Each of the plurality of pulse output circuits has a function of driving a gate line. The pixel circuit is electrically connected to the gate line. Each of the plurality of pulse output circuits includes a first transistor. The pixel circuit includes a second transistor. A layer including the second transistor is over a layer including the first transistor, and the first transistor and the second transistor overlap with each other.
Claims8
A display device comprising:
- a display portion over a substrate,
- wherein the display portion comprises a pixel comprising a light-emitting element,
- wherein the display portion comprises:
- a first conductive layer;
- a first insulating layer comprising a region positioned over the first conductive layer;
- a first semiconductor layer comprising a region positioned over the first insulating layer and comprising a channel formation region of a first transistor;
- a second insulating layer comprising a region positioned over the first semiconductor layer;
- a second conductive layer comprising a region positioned over the second insulating layer and comprising a region serving as a gate electrode of a second transistor;
- a third insulating layer comprising a region positioned over the second conductive layer and comprising a region serving as a gate insulating layer of the second transistor;
- a second semiconductor layer comprising a region positioned over the third insulating layer and comprising a channel formation region of the second transistor;
- a third conductive layer comprising a region in contact with an upper surface of the second semiconductor layer and comprising a region serving as one of a source electrode and a drain electrode of the second transistor;
- a fourth conductive layer comprising a region in contact with the upper surface of the second semiconductor layer and serving as the other of the source electrode and the drain electrode of the second transistor;
- and
- a fourth insulating layer comprising a region positioned over the third conductive layer and a region positioned over the fourth conductive layer,
- wherein the substrate has flexibility,
- wherein the light-emitting element comprises a region positioned over the fourth insulating layer,
- wherein the first conductive layer comprises a region overlapping with the first semiconductor layer,
- wherein the first conductive layer comprises a region overlapping with the second semiconductor layer,
- wherein the second conductive layer is positioned in a layer different from a gate electrode of the first transistor,
- wherein the second semiconductor layer does not comprise a region overlapping with the first semiconductor layer,
- wherein the fourth conductive layer comprises a region serving as one electrode of a capacitor, and
- wherein the fourth conductive layer comprises a region overlapping with the first semiconductor layer.
19 more elements
A display device comprising:
- a display portion over a substrate,
- wherein the display portion comprises a pixel comprising a light-emitting element,
- wherein the display portion comprises:
- a first conductive layer;
- a first insulating layer comprising a region positioned over the first conductive layer;
- a first semiconductor layer comprising a region positioned over the first insulating layer and comprising a channel formation region of a first transistor;
- a second insulating layer comprising a region positioned over the first semiconductor layer;
- a second conductive layer comprising a region positioned over the second insulating layer and comprising a region serving as a gate electrode of a second transistor;
- a third insulating layer comprising a region positioned over the second conductive layer and comprising a region serving as a gate insulating layer of the second transistor;
- a second semiconductor layer comprising a region positioned over the third insulating layer and comprising a channel formation region of the second transistor;
- a third conductive layer comprising a region in contact with an upper surface of the second semiconductor layer and comprising a region serving as one of a source electrode and a drain electrode of the second transistor;
- a fourth conductive layer comprising a region in contact with the upper surface of the second semiconductor layer and serving as the other of the source electrode and the drain electrode of the second transistor, and
- a fourth insulating layer comprising a region positioned over the third conductive layer and a region positioned over the fourth conductive layer,
- wherein the substrate has flexibility,
- wherein the light-emitting element comprises a region positioned over the fourth insulating layer,
- wherein the first conductive layer comprises a region overlapping with the first semiconductor layer,
- wherein the first conductive layer comprises a region overlapping with the second semiconductor layer,
- wherein the second conductive layer is positioned in a layer different from a gate electrode of the first transistor,
- wherein the second semiconductor layer does not comprise a region overlapping with the first semiconductor layer,
- wherein the fourth conductive layer comprises a region serving as one electrode of a capacitor, and
- wherein the fourth conductive layer comprises a region overlapping with the channel formation region of the first transistor.
18 more elements
Dependencies are inferred from the claim text.