Optoelectronic component, method for operating an optoelectronic component and method for producing an optoelectronic component
Assigneeams-OSRAM International GmbH
InventorsGunnar Petersen, Daniel Richter
Life of this patent
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Abstract
An optoelectronic component comprises a field effect transistor that is implemented in a first die and has a source and a sink. The field effect transistor is implemented as a floating-gate transistor with a control electrode and an isolated gate electrode. The optoelectronic component further comprises a light diode that is implemented in a second die and has an anode and a cathode. The second die is arranged on an upper side of the first die. The light diode and a channel of the field effect transistor are electrically connected in series.
Claims20
An optoelectronic component, comprising:
- a field-effect transistor formed in a first partial chip, having a source and a drain, wherein the field-effect transistor is configured as a floating gate transistor having a control electrode and an isolated gate electrode, and
- a light-emitting diode, which is formed in a second partial chip, having an anode and a cathode,
- wherein the second partial chip is arranged on an upper side of the first partial chip,
- wherein the light-emitting diode and a channel of the field-effect transistor are electrically connected in series,
- wherein the field-effect transistor is intended to set a brightness value of the light-emitting diode, and
- wherein the field-effect transistor comprises, in addition to the control electrode and the isolated gate electrode, a further control electrode and a further isolated gate electrode.
A method for producing an optoelectronic component comprising:
- providing a field-effect transistor, which is formed in a first partial chip, comprising a source and a drain, wherein the field-effect transistor is configured as a floating gate transistor comprising a control electrode and an isolated gate electrode,
- wherein the field-effect transistor comprises, in addition to the control electrode and the isolated gate electrode, a further control electrode and a further isolated gate electrode;
- providing a light-emitting diode, which is formed in a second partial chip, comprising an anode and a cathode;
- arranging the second partial chip on an upper side of the first partial chip, wherein the light-emitting diode and a channel of the field-effect transistor are electrically connected in series, wherein the field-effect transistor is intended to set a brightness value of the light-emitting diode.
Dependencies are inferred from the claim text.