Radio frequency impedance matching network with flexible tuning algorithms

A method for processing a substrate in a plasma processing chamber, comprising:

• storing a process recipe in a tool controller, the process recipe comprising a first process recipe step and a second process recipe step;
• implementing the first process recipe step, wherein implementing the first process recipe step comprises:
• executing, by use of a match controller, a first tuning algorithm, wherein executing the first tuning algorithm comprises adjusting at least one adjustable tuning element of an impedance matching network to at least a first impedance setting, and the impedance matching network comprises:
• a first node adapted for coupling to a radio frequency (RF) power generator,
• a second node adapted for coupling to an electrode within the plasma processing chamber, and
• the at least one adjustable tuning element;
• and
• delivering, by use of the impedance matching network, RF power to an electrode disposed within the plasma processing chamber, wherein the delivery of RF power is provided while the first tuning algorithm is being executed by the match controller, and causes gases disposed within the plasma processing chamber to form or maintain a plasma that has a first load impedance;
• developing a weighting parameter or a correction parameter to optimize a tuning gain, tuning matrix, or combinations thereof based on historical data of previous process steps or process runs;
• updating a match tuning performance of a second tuning algorithm in real time based upon the historical data and the weighting parameter or correction parameter;
• and
• implementing the second process recipe step, wherein implementing the second process recipe step comprises:
• executing, by use of the match controller, the second tuning algorithm, wherein executing the second tuning algorithm comprises setting the at least one adjustable tuning element to at least a second impedance setting;
• continuing to deliver, by use of the impedance matching network, RF power to the electrode disposed within the plasma processing chamber;
• and
• adjusting at least one plasma processing variable that causes the first load impedance to change to a second load impedance, wherein the continued delivery of RF power is provided while the second tuning algorithm is being executed by the match controller, and the second tuning algorithm is executed based on the adjusted at least one plasma processing variable.

An impedance matching network adapted for coupling between an RF power generator and a plasma processing chamber, comprising:

• a first node adapted for coupling to the RF power generator;
• a second node adapted for coupling to an electrode within the plasma processing chamber, and
• adjustable tuning elements for transforming at least one of a plurality of impedances at the second node to an output impedance of the RF power generator at the first node;
• and
• a match controller coupled to the adjustable tuning elements, wherein the match controller controls setting an impedance transformation with at least one of the adjustable tuning elements by use of at least one of a plurality of tuning algorithms stored in a match controller memory;
• a tool controller having a memory for storing the plurality of tuning algorithms, the tool controller is operable to update a match performance of the plurality of tuning algorithms in real time for use during a process recipe step based upon historical data comprising reflected power and tuning speeds from at least one previous process recipe or step, and an adjustment of a set point of a plurality of variable tuning elements is controlled by the tuning algorithm to adjust for real time variations in a plasma generated in the plasma processing chamber;
• and
• a communications device between the tool controller and the match controller for transferring tuning algorithms between the tool controller and match controller memories.