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US 12,724,197 B2Granted
Thin silicon photonics with integrated III-V waveguide
AssigneeOpenLight Photonics, Inc.
InventorsHan Yun, Erik Johan Norberg, John Parker
Life of this patent
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Abstract
A device for thin-film silicon photonics with an integrated III-V waveguide structure includes a substrate containing a silicon layer and a III-V waveguide structure bonded to the substrate. The device also includes a waveguide transition structure, enabling light to be coupled between the silicon layer and the III-V waveguide structure. The waveguide transition structure may include a first section, a second section, and a third section, each section including one or more tapered segments.
Claims20
A device comprising:
- a substrate comprising a silicon layer;
- a III-V structure bonded to the substrate;
- and
- formed in the silicon layer and the III-V structure, a waveguide transition structure comprising first, second, and third sections along an optical axis, the waveguide transition structure comprising:
- a silicon transition segment formed in the silicon layer and extending across the first, second, and third sections, wherein the silicon transition segment increases in width from an eighth width at the interface between the first and second sections to a ninth width at the interface between the second and third sections, the eight width being less than the ninth width;
- and
- a III-V slab transition segment formed in the III-V structure and extending across the first and second sections and into the third section, wherein:
- the III-V slab transition segment decreases in width from a first width at an interface between a first exterior edge of the device and the first section to a second width at an interface between the first section and the second section;
- the III-V slab transition segment decreases in width from the second width at the interface between the first section and the second section to a third width at an interface between the second section and the third section;
- and
- the III-V slab transition segment decreases in width from the third width at the interface between the second section and the third section to a fourth width at an interface between the third section and a second exterior edge of the device.
8 more elements
A method of manufacturing a photonic device, the method comprising:
- providing a substrate comprising a silicon layer;
- patterning the silicon layer to form a silicon waveguide transition segment extending across the first, second, and third sections, wherein the silicon transition segment increases in width from an eighth width at the interface between the first and second sections to a ninth width at the interface between the second and third sections, the eight width being less than the ninth width;
- forming a top dielectric layer above the silicon layer;
- bonding a III-V semiconductor structure to the top dielectric layer;
- and
- patterning the III-V semiconductor structure to form a III-V waveguide transition structure overlapping the silicon waveguide transition segment, the III-V waveguide transition structure comprising a first section, second section, and third section arranged sequentially along an optical axis of the photonic device, the III-V waveguide transition structure comprising a III-V slab transition segment extending across the first and second sections and into the third section, wherein:
- the III-V slab transition segment decreases in width from a first width at an interface between a first exterior edge of the device and the first section to a second width at an interface between the first section and the second section;
- the III-V slab transition segment decreases in width from the second width at the interface between the first section and the second section to a third width at an interface between the second section and the third section;
- and
- the III-V slab transition segment decreases in width from the third width at the interface between the second section and the third section to a fourth width at an interface between the third section and a second exterior edge of the device.
7 more elements
Dependencies are inferred from the claim text.