Polishing apparatus for substrate and polishing method for substrate using the same

A polishing apparatus for a substrate, comprising:

• a platen having a polishing pad attached to an upper surface thereof, the platen being configured to rotate the polishing pad in a rotational direction;
• a temperature control unit configured to spray a temperature control fluid onto the polishing pad;
• a slurry supply unit configured to supply a slurry to the polishing pad;
• a polishing head on the polishing pad, and configured to rotate a semiconductor substrate in contact with the polishing pad;
• and
• a first fence between the temperature control unit and the slurry supply unit along the rotational direction extending from a center of the polishing pad outwardly and configured to control a flow of the temperature control fluid, wherein the first fence comprises a plurality of flow paths extending from a front surface of the first fence to a rear surface of the first fence, wherein the plurality of flow paths are configured to permit partial penetration of the temperature control fluid through the first fence and to partially block the temperature control fluid;
• and
• a second fence between the polishing head and the temperature control unit along the rotational direction and extending from the center of the polishing pad outwardly and configured to control a flow of the slurry and polishing by-products remaining in the polishing pad, wherein the second fence does not comprise a flow path extending from a front surface of the second fence to a rear surface of the second fence,
• wherein the temperature control unit, the slurry supply unit, and the polishing head are sequentially positioned along the rotational direction.

A polishing apparatus for a substrate, comprising:

• a platen supporting a polishing pad and configured to rotate in a rotational direction;
• a temperature control unit configured to spray a temperature control fluid onto the polishing pad;
• a first fence downstream from the temperature control unit along the rotational direction, and extending from a center of the polishing pad outwardly to control a flow of the temperature control fluid, wherein the first fence comprises a plurality of flow paths extending from a front surface of the first fence to a rear surface of the first fence, wherein the plurality of flow paths are configured to permit partial penetration of the temperature control fluid through the first fence and to partially block the temperature control fluid;
• a slurry supply unit downstream from the first fence along the rotational direction, and configured to supply a slurry to the polishing pad;
• a polishing head downstream from the slurry supply unit along the rotational direction, and configured to rotate a semiconductor substrate in contact with the polishing pad;
• and
• a second fence between the polishing head and the temperature control unit along the rotational direction and extending from the center of the polishing pad outwardly and configured to control a flow of the slurry and polishing by-products remaining in the polishing pad, wherein the second fence does not comprise a flow path extending from a front surface of the second fence to a rear surface of the second fence.