Polishing pad and method for manufacturing semiconductor device using the same

A polishing pad comprising:

• a polishing layer comprising a first surface which is a polishing surface and a second surface which is an opposite surface of the first surface, and comprising a first through hole passing through the first surface and the second surface;
• a window disposed in the first through hole;
• and
• a support layer disposed on the second surface of the polishing layer, comprising a third surface and a fourth surface which is an opposite surface of the third surface, and comprising a second through hole connected to the first through hole while passing through the third surface and the fourth surface,
• wherein the second through hole is smaller than the first through hole,
• a lowermost surface of the window is supported by the third surface,
• a first adhesive layer is interposed between the lowermost surface of the window and the third surface,
• a second adhesive layer is interposed between the second surface and the third surface;
• and between the lowermost surface of the window and the third surface, and
• the support layer comprises a compressed region (CR) in a region corresponding to the lowermost surface of the window,
• wherein the first adhesive layer comprises a moisture-cured product of a moisture-curable adhesive composition, and the second adhesive layer comprises a thermoplastic resin,
• wherein the moisture-curable adhesive composition comprises:
• a urethane-based prepolymer formed from a monomer component comprising
• an aromatic diisocyanate represented by Chemical Formula 1;
• and
• a diol having 2 to 10 carbon atoms;
• and
• an unreacted aromatic diisocyanate represented by Chemical Formula 1:
• wherein the urethane-based prepolymer is present in an amount of 90 wt % to 99 wt %;
• and the unreacted aromatic diisocyanate is present in an amount of 1 wt % to 10 wt %,
• wherein the compressed region is an integrally formed continuous compressed region extending from a side surface of the second through hole toward an interior of the support layer so as to correspond to the lowermost surface of the window, wherein a lowermost surface of the compressed region is closer to the window than the fourth surface, and
• the compressed region does not include two or more compressed regions having different pressurizing directions in the forming process.