Optoelectronic device and method for manufacturing such a device

A method for manufacturing an optoelectronic device comprising the following steps:

• a step of providing an initial optoelectronic device comprising:
• a support extending according to a plane and having a support face;
• and
• at least one light-emitting diode cooperating directly or indirectly with said support face, said at least one light-emitting diode having a three-dimensional shape, and comprising a height extending according to a first direction between a proximal portion and a distal portion opposite to said proximal portion along said first direction, said light-emitting diode comprising a semiconductor core doped according to a first conductivity type, the proximal portion corresponding to a growth base of said semiconductor core, and comprising a semiconductor shell doped according to a second conductivity type opposite to the first conductivity type, said semiconductor shell covering at least partially said semiconductor core;
• a step of passivating the at least one light-emitting diode to form the optoelectronic device, in which the at least one light-emitting diode is passivated over an implanted portion extending over an implanted height counted along the first direction, the implanted portion being parallel to the plane of the support, said implanted height being strictly smaller than the height of the light-emitting diode, said implanted portion being disposed between the distal portion and the proximal portion, and being separate from the distal portion, so that the implanted portion delimits within the semiconductor shell at least one passivated portion separate from the distal portion of the light-emitting diode, the semiconductor shell comprising at least one active portion delimited at least partially by said at least one passivated portion, said at least one passivated portion having a conductivity strictly lower than a conductivity of said at least one active portion wherein the at least one light-emitting diode is passivated so that the implanted portion also delimits within the semiconductor core at least one first implanted portion separate from the distal portion of the light-emitting diode, the semiconductor core comprising at least one first non-implanted portion delimited at least partially by said at least one first implanted portion, said at least one first implanted portion having an ion concentration strictly different from an ion concentration of said at least one first non-implanted portion.